ferroelectric property meaning in English
铁电特性
Examples
- Ferroelectric properties of optically active polymers
旋光性聚合物的铁电性能 - Xrd , sem , temperature and frequency dependence of dielectric constant , and hysteresis loop were measured to investigate and study structure , microstructure , dielectric and ferroelectric properties of barium titanate dielectric ceramics
应用x光衍射谱、扫描电子显微镜、介电率的温度与频率依存关系以及电滞回线测量,调查和研究所制备的钛酸钡陶瓷的结构、微结构、介电和铁电性质。 - In recent years , lead zirconium ti tanate pb ( zrxtii - ? on , ( pzt ( x / l - . x ) ) ferroelectric thin films have been extensively applied to many high - tech fields because of their excellent ferroelectric properties such as high dielectric constant , low dissipation factor , nonvolatility and so on
锆钛酸铅( pzt )薄膜具有优良的介电、铁电、压电和光电特性,且抗辐射性强,不挥发,已广泛地应用于微电子,集成光学和微机械系统( mems )等高技术领域。 - The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ) . based on grazing incidence x - ray diffraction ( gixrd ) equipment , we find that residual stress exist in magnetron sputtering plct film , in addition , the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system
利用广角x射线衍射技术对不同溅射工艺下plct薄膜的相结构进行了研究;采用扫描电子显微镜( sem )和原子力显微镜( afm )分别观察了薄膜的表面形貌;利用掠入射x射线衍射( gixrd )测量了薄膜的残余应力。 - In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。
Related Words
- ferroelectric
- ferroelectric film
- ferroelectric memory
- ferroelectric material
- ferroelectric mode
- ferroelectric properties
- ferroelectric carrier
- ferroelectric converter
- ferroelectric glass
- ferroelectric domains
- ferroelectric power generation
- ferroelectric properties
- ferroelectric random access memory
- ferroelectric semiconductor