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ferroelectric property meaning in English

铁电特性

Examples

  1. Ferroelectric properties of optically active polymers
    旋光性聚合物的铁电性能
  2. Xrd , sem , temperature and frequency dependence of dielectric constant , and hysteresis loop were measured to investigate and study structure , microstructure , dielectric and ferroelectric properties of barium titanate dielectric ceramics
    应用x光衍射谱、扫描电子显微镜、介电率的温度与频率依存关系以及电滞回线测量,调查和研究所制备的钛酸钡陶瓷的结构、微结构、介电和铁电性质。
  3. In recent years , lead zirconium ti tanate pb ( zrxtii - ? on , ( pzt ( x / l - . x ) ) ferroelectric thin films have been extensively applied to many high - tech fields because of their excellent ferroelectric properties such as high dielectric constant , low dissipation factor , nonvolatility and so on
    锆钛酸铅( pzt )薄膜具有优良的介电、铁电、压电和光电特性,且抗辐射性强,不挥发,已广泛地应用于微电子,集成光学和微机械系统( mems )等高技术领域。
  4. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ) . based on grazing incidence x - ray diffraction ( gixrd ) equipment , we find that residual stress exist in magnetron sputtering plct film , in addition , the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system
    利用广角x射线衍射技术对不同溅射工艺下plct薄膜的相结构进行了研究;采用扫描电子显微镜( sem )和原子力显微镜( afm )分别观察了薄膜的表面形貌;利用掠入射x射线衍射( gixrd )测量了薄膜的残余应力。
  5. In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
    Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。

Related Words

  1. ferroelectric
  2. ferroelectric film
  3. ferroelectric memory
  4. ferroelectric material
  5. ferroelectric mode
  6. ferroelectric properties
  7. ferroelectric carrier
  8. ferroelectric converter
  9. ferroelectric glass
  10. ferroelectric domains
  11. ferroelectric power generation
  12. ferroelectric properties
  13. ferroelectric random access memory
  14. ferroelectric semiconductor
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